The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Aug. 20, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Kyoung In Lee, Icheon-si, KR;

Heon Joon Kim, Yongin-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14638 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14634 (2013.01); H01L 27/14645 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H04N 5/379 (2018.08);
Abstract

An image sensing device to control flow of photocharges using a new method is disclosed. The image sensing device includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion (FD) region formed apart from the photoelectric conversion region, a vertical pillar formed between the photoelectric conversion region and the floating diffusion region to transfer the photocharges from the photoelectric conversion region to the floating diffusion (FD) region, and a switching element located between the photoelectric conversion region and the floating diffusion (FD) region.


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