The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Apr. 16, 2019
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Yuichi Nakao, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11507 (2017.01); H01L 49/02 (2006.01); H01L 27/11502 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 27/11502 (2013.01); H01L 28/55 (2013.01); H01L 28/57 (2013.01); H01L 28/60 (2013.01); H01L 28/65 (2013.01); H01L 28/75 (2013.01);
Abstract
The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.