The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jun. 28, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ju-Ik Lee, Anyang-si, KR;
Dong-Wan Kim, Hwaseong-si, KR;
Seokho Shin, Seoul, KR;
Jung-Hoon Han, Hwaseong-si, KR;
Sang-Oh Park, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/17 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01); H01L 25/18 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/1436 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.