The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Mar. 06, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Tomonari Shioda, Yokkaichi, JP;

Takashi Ishida, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 23/535 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 23/535 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device according to an embodiment includes: a semiconductor substrate including a first surface, a first contact part provided at a deeper level than the first surface, and a second contact part protruding up to a higher level than the first surface from the first contact part; a stacked body in which insulating layers and electrode layers are alternately stacked on the first surface; and a semiconductor film extending, on the second contact part, in the stacked body in a first direction perpendicular to the first surface. At an interface between the first contact part and the second contact part, a length of the first contact part in a second direction parallel to the first surface is larger than a length of the second contact part in the second direction.


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