The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Feb. 27, 2018
Shimadzu Corporation, Kyoto, JP;
Hidenori Takahashi, Kyoto, JP;
Shosei Yamauchi, Kyoto, JP;
Shimadzu Corporation, Kyoto, JP;
Abstract
After a precursor ion has been captured within an ion trap (), electrons having a high energy equal to or higher than 30 eV are introduced from an electron irradiator () into the ion trap () to increase the number of charges of the ion through an interaction between the electrons and the ion. Hydrogen radicals are subsequently introduced from a hydrogen radical irradiator () into the ion trap () to dissociate the ion by a hydrogen-attachment dissociation (HAD) method. The larger the number of charges of the ion is, the higher the dissociation efficiency by the HAD method becomes. Therefore, for example, even in the case of using an ion source in which most of the generated ions are singly charged ions as in a MALDI ion source, the dissociation efficiency can be improved by increasing the number of charges of the precursor ion within the ion trap ().