The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Jun. 03, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong Hun Kwak, Hwasung, KR;

Sang Wan Nam, Hwasung, KR;

Chi Weon Yoon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); H01L 27/11524 (2017.01); G11C 16/08 (2006.01); H01L 27/11556 (2017.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/3427 (2013.01); G11C 16/3459 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 2211/5641 (2013.01); G11C 2211/5646 (2013.01);
Abstract

A memory device includes a memory cell array including a plurality of word lines, at least one select line provided above the plurality of word lines, and a channel region passing through the plurality of word lines and the at least one select line, the plurality of word lines and the channel region providing a plurality of memory cells, and a controller. The controller is to store data in a program memory cell among the plurality of memory cells by sequentially performing a first programming operation and a second programming operation, and to determine a program voltage input to a program word line connected to the program memory cell, in the first programming operation, based on information regarding the program memory cell.


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