The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

May. 26, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jong Woo Kim, Gyeonggi-do, KR;

Young Cheol Shin, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/32 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0425 (2013.01); G11C 7/1048 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01);
Abstract

The present disclosure relates to an electronic device and a method of operating a memory device having a reduced program operation time including pre-charging a select line connected to the select transistor to a first select voltage during a first time period, discharging the select line during a second time period subsequent to the first time period, and discharging the select line while word lines connected to the plurality of memory cells are pre-charged to an operation voltage in a third time period subsequent to the second time period to change a level of the first select voltage pre-charged to the select line to a second select voltage.


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