The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Jul. 15, 2020
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Yohei Yasuda, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); H03K 3/356 (2006.01); H03K 5/156 (2006.01); H03K 19/003 (2006.01); H03K 19/00 (2006.01); H03K 19/013 (2006.01);
U.S. Cl.
CPC ...
G11C 7/222 (2013.01); H03K 3/356104 (2013.01); H03K 5/1565 (2013.01); H03K 19/00 (2013.01); H03K 19/003 (2013.01); H03K 19/0136 (2013.01);
Abstract

According to one embodiment, in a semiconductor device, the first pull-up circuit is connected to a third node and to a fourth node. The third node is a node between a drain of the first transistor with a first conductivity type and a source of the second transistor with the first conductivity type. The fourth node is a node between a drain of the third transistor with the first conductivity type, and a source of the fourth transistor with the first conductivity type and a source of the fifth transistor with the first conductivity type. The first pull-down circuit is connected to a fifth node and to a sixth node. The fifth node is a node between a drain of the first transistor with a second conductivity type and a source of the second transistor with the second conductivity type. The sixth node is a node between a drain of the third transistor with the second conductivity type and a source of the fourth transistor with the second conductivity type and a source of the fifth transistor with the second conductivity type.


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