The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Aug. 10, 2018
Applicant:

President and Fellows of Harvard College, Cambridge, MA (US);

Inventors:

Denis D. Sukachev, Cambridge, MA (US);

Alp Sipahigil, Cambridge, MA (US);

Christian Thieu Nguyen, Cambridge, MA (US);

Mihir Keshav Bhaskar, Cambridge, MA (US);

Ruffin E. Evans, Somerville, MA (US);

Mikhail D. Lukin, Cambridge, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 10/00 (2019.01); H04B 10/90 (2013.01); B82Y 10/00 (2011.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G06N 10/00 (2019.01); G11C 11/16 (2013.01); H04B 10/90 (2013.01); B82Y 10/00 (2013.01);
Abstract

Systems and methods are disclosed for preparing and evolving atomic defects in diamond. Silicon vacancy spins may be cooled to temperatures equal to or below 500 mK to reduce the influence of phonons. The cooling, manipulation, and observation systems may be designed to minimize added heat into the system. A CPMG sequence may be applied to extend coherence times. Coherence times may be extended, for example, to 13 ms.


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