The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Sep. 25, 2018
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Norimitsu Baba, Shiojiri, JP;

Keiichi Mukaiyama, Matsumoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G04G 17/06 (2006.01); G01S 19/35 (2010.01); G04R 60/10 (2013.01); G04C 10/02 (2006.01); G01S 19/14 (2010.01); G04R 20/04 (2013.01); G04G 21/04 (2013.01); G04G 19/02 (2006.01); G04B 19/06 (2006.01);
U.S. Cl.
CPC ...
G01S 19/35 (2013.01); G01S 19/14 (2013.01); G04C 10/02 (2013.01); G04R 20/04 (2013.01); G04R 60/10 (2013.01); G04B 19/06 (2013.01); G04G 19/02 (2013.01); G04G 21/04 (2013.01);
Abstract

An electronic timepiece includes a dial, a solar battery on a rear surface side of the dial, and an antenna on a rear surface side of the solar battery so as to receive a radio wave. The solar battery includes a solar cell for generating power and a first non-power generating section which transmits the radio wave to the antenna. The solar cell includes a metal electrode, a semiconductor layer on the dial side of the metal electrode, and a transparent electrode on the dial side of the semiconductor layer. The metal electrode and the transparent electrode are excluded from the first non-power generating section, and the semiconductor layer is included within at least a portion of the first non-power generating section. The solar battery further includes a non-conductive member which regulates light transmittance on the dial side of the semiconductor layer in the first non-power generating section.


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