The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Dec. 28, 2017
Applicant:
Dowa Thermotech Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
DOWA THERMOTECH CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/513 (2006.01); C04B 35/58 (2006.01); C03C 17/22 (2006.01); B21D 37/20 (2006.01); B21J 13/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C03C 17/225 (2013.01); C04B 35/58 (2013.01); C23C 16/513 (2013.01); B21D 37/20 (2013.01); B21J 13/02 (2013.01);
Abstract
A vanadium silicon nitride film formed as a hard film to a base material satisfies 0.30≤a/b≤1.7 and 0.24≤b≤0.36 when a=vanadium element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]) and b=silicon element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]), and has a hardness of 2300 HV or more.