The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Aug. 04, 2017
Applicant:

Royal Melbourne Institute of Technology, Melbourne, AU;

Inventors:

Mohammad Taha, Melbourne, AU;

Sumeet Walia, Melbourne, AU;

Sharath Sriram, Melbourne, AU;

Madhu Bhaskaran, Melbourne, AU;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/58 (2006.01); C23C 14/00 (2006.01); C01G 31/02 (2006.01); C23C 14/35 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/5806 (2013.01); C01G 31/02 (2013.01); C23C 14/0036 (2013.01); C23C 14/083 (2013.01); C23C 14/3485 (2013.01); C23C 14/35 (2013.01);
Abstract

Method for fabricating a crystalline vanadium oxide (VO) film comprising the steps of: a) depositing an amorphous VOfilm on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O), and the substrate has a temperature of less than about 50° C.; and b) annealing the deposited amorphous VOfilm to crystallise the amorphous VOfilm into a crystalline VOfilm that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VOfilm may be suitable for a broad range of substrates.


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