The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Apr. 19, 2019
Applicant:
Glo Ab, Lund, SE;
Inventors:
Fariba Danesh, Pleasanton, CA (US);
Max Batres, Fremont, CA (US);
Michael J. Cich, Fremont, CA (US);
Zhen Chen, Dublin, CA (US);
Assignee:
GLO AB, Lund, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 25/075 (2006.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 33/325 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.