The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
May. 28, 2019
Iqe Plc, Cardiff, GB;
Amy Wing Kwan Liu, Mountain View, CA (US);
Dmitri Lubyshev, Bethlehem, PA (US);
Joel Mark Fastenau, Bethlehem, PA (US);
Scott Alan Nelson, River Falls, WI (US);
Michael Vincent Kattner, Lehighton, PA (US);
Philip Lee Frey, Bethlehem, PA (US);
Matthew Fetters, Allentown, PA (US);
Hubert Krysiak, New Tripoli, PA (US);
Zhaoquan Zeng, Bethlehem, PA (US);
Aled Owen Morgan, Cardiff, GB;
Stuart Andrew Edwards, Cowbridge, GB;
IQE plc, Cardiff, GB;
Abstract
An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.