The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Feb. 26, 2020
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Noriaki Murakami, Kiyosu, JP;
Toru Oka, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu, JP;
Abstract
To provide a semiconductor device including an electrode having a low contact resistance with the back surface of a GaN substrate and being suitably bonded with solder, and having a low electric resistance of the current flowing in a vertical direction. The semiconductor device has a GaN substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a body electrode, a drain electrode, a source electrode, and a gate electrode. The drain electrode has a Ti layer, an Al layer, a Ti layer, a TiN layer, a Ti layer, a Ni layer, and an Ag layer sequentially from the second surface of the GaN substrate.