The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Mar. 22, 2019
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/36 (2006.01); H01L 29/04 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/2686 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 29/04 (2013.01); H01L 29/36 (2013.01); H01L 29/45 (2013.01);
Abstract
A silicon carbide semiconductor device includes a first semiconductor layer of silicon carbide, a device structure provided on top of the first semiconductor layer, a second semiconductor layer of silicon carbide having a higher impurity concentration than the first semiconductor layer, provided under the first semiconductor layer, the second semiconductor layer implementing an ohmic-contact, and a metallic electrode film provided under the second semiconductor layer. A thickness of a carbon-containing region in which carbon-atoms are precipitated between the second semiconductor layer and the metallic electrode film is 10 nm or less.