The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Jun. 24, 2019
Power Semiconductor, Gilroy, CA (US);
Hamza Yilmaz, Gilroy, CA (US);
IPOWER SEMICONDUCTOR, Gilroy, CA (US);
Abstract
Semiconductor devices and methods of fabrication are provided. The semiconductor device includes a Charge Injection Controlled (CIC) Fast Recovery Diode (FRD) to control charge injection by lowering carrier storage. The device can have a first conductivity type semiconductor substrate, and a drift region that includes a doped buffer region, a doped middle region and a doped field stop region or carrier storage region. The device can also include a second conductivity type shield region including a deep junction encircling (or substantially laterally beneath) the buffer region and a second conductivity type shallow junction anode region in electrical contact with a second conductivity type anode electrode. The deep junction can have a range of doping concentrations surrounding the buffer regions to deplete buffer charge laterally as well as vertically to prevent premature device breakdown. The first conductivity type may be N type and the second conductivity type may be P type.