The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Sep. 07, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Tsuyoshi Osaga, Tokyo, JP;
Yasuo Ata, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 27/088 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device includes, on an upper surface side of an N-type drift layer, a P-type well layer, an N-type emitter layer, a gate insulation film, and a gate electrode, and includes, on a lower surface side of the N-type drift layer, an N-type buffer layer, a P-type collector layer, and an N-type layer. The N-type layer is partially formed in the N-type buffer layer. The N-type layer has impurity concentration being higher than impurity concentration of the N-type buffer layer and being equal to or higher than impurity concentration of the P-type collector layer.