The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Apr. 15, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Changyoung Park, Yongin-si, KR;
Sanghun Lee, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/109 (2006.01); A61B 5/00 (2006.01); G01N 21/3554 (2014.01); G01J 1/44 (2006.01); H01L 31/0304 (2006.01); G01J 5/04 (2006.01); B82Y 20/00 (2011.01); G01J 5/02 (2006.01); H01L 31/0384 (2006.01); H01L 31/101 (2006.01); H01L 31/105 (2006.01); G01J 5/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); A61B 5/443 (2013.01); B82Y 20/00 (2013.01); G01J 1/44 (2013.01); G01J 5/024 (2013.01); G01J 5/046 (2013.01); G01J 5/0853 (2013.01); G01N 21/3554 (2013.01); H01L 27/146 (2013.01); H01L 27/14669 (2013.01); H01L 27/14694 (2013.01); H01L 31/022466 (2013.01); H01L 31/03046 (2013.01); H01L 31/03845 (2013.01); H01L 31/035218 (2013.01); H01L 31/035236 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); H01L 31/1013 (2013.01); G01J 2001/4446 (2013.01);
Abstract
An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.