The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Apr. 24, 2019
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Satoshi Yamabi, Yokohama, JP;

Yoshinori Kotani, Yokohama, JP;

Akio Kashiwazaki, Yokohama, JP;

Yoshihiro Ohashi, Tokyo, JP;

Masami Tsukamoto, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01); H04N 5/225 (2006.01); G02B 1/111 (2015.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); G02B 1/111 (2013.01); H01L 27/14618 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H04N 5/2253 (2013.01); H04N 5/2254 (2013.01);
Abstract

A photoelectric conversion device, including: a photoelectric conversion substrate having a plurality of photoelectric conversion portions and a microlens array arranged on the plurality of photoelectric conversion portions; a light-transmitting plate covering the microlens array; and a film arranged between the microlens array and the light-transmitting plate, wherein the film has a refractive index within a range from 1.05 to 1.15, an average transmittance of light in a wavelength region within a range from 400 nm to 700 nm of 98.5% or higher, and a film thickness within a range from 500 nm to 5000 nm.


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