The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11069727 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 20, 2021

Filed:

Feb. 19, 2018
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Takashi Machida, Tokyo, JP;

Ryoto Yoshita, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/14609 (2013.01); H01L 27/14614 (2013.01); H01L 27/14623 (2013.01); H01L 27/14645 (2013.01); H04N 5/37452 (2013.01); H04N 9/045 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract

The imaging element includes, within a pixel, a semiconductor substrate, a photoelectric conversion unit formed in the semiconductor substrate, a first charge storage unit that stores a charge generated by the photoelectric conversion unit, and a first transfer gate unit formed on an opposite surface of the semiconductor substrate on an opposite side of a light incident surface and used for transfer of a charge from the photoelectric conversion unit to the first charge storage unit. The first transfer gate unit includes a first electrode embedded in a first trench formed in the semiconductor substrate from the opposite surface of the semiconductor substrate. The photoelectric conversion unit includes the first electrode, and a second electrode surrounding at least a portion of a periphery of the first electrode.


Find Patent Forward Citations

Machida, Takashi. (2021). Imaging element having transfer gate structure comprising a trench (U.S. Patent No. 11069727). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11069727

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