The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

May. 21, 2018
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventor:

Hiroshi Matsukizono, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); H01L 21/8234 (2013.01); H01L 27/088 (2013.01); H01L 27/1259 (2013.01); H01L 27/3262 (2013.01); H01L 29/7869 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract

An active matrix substrate according to an embodiment of the present invention includes: a substrate; a plurality of first TFTs supported by the substrate and provided in a non-displaying region; and a peripheral circuit including the plurality of first TFTs. Each first TFT includes: a first gate electrode provided on the substrate; a first gate insulating layer covering the first gate electrode; a first oxide semiconductor layer opposed to the first gate electrode via the first gate insulating layer; and a first source electrode and a first drain electrode connected to a source contact region and a drain contact region of the first oxide semiconductor layer. Each first TFT has a bottom contact structure. A first region of the first gate insulating layer that overlaps the channel region has a thickness which is smaller than a thickness of a second region of the first gate insulating layer that overlaps the source contact region and the drain contact region.


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