The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Aug. 12, 2019
Infineon Technologies Ag, Neubiberg, DE;
Joost Adriaan Willemen, Munich, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A semiconductor device includes 'n' pairs of pn-junction structures, wherein the i-th pair includes two pn-junction structures of the i-th type, wherein the two pn-junction structures of the i-th type are anti-serially connected, wherein the pn-junction structure of the i-th type has an i-th junction grading coefficient m. A first pair of the n pairs of pn-junction structures has a first junction grading coefficient mand a second pair of the n pairs of pn-junction structures has a second junction grading coefficient m. The junction grading coefficients m, mare adjusted to result in generation of a spurious third harmonic signal of the semiconductor device with a signal power level, which is at least 10 dB lower than a reference signal power level of the spurious third harmonic signal obtained for a reference case in which the first and second junction grading coefficients m, mare 0.25.