The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Dec. 06, 2019
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Alexander Mityashin, Heverlee, BE;

Soeren Steudel, Oud-Heverlee, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 25/0756 (2013.01); H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 33/32 (2013.01); H01L 2933/0033 (2013.01);
Abstract

A method is provided for obtaining one or more Light Emitting Diode (LED) devices reconstituted over a carrier substrate. The method includes providing a silicon-based semiconductor substrate as the carrier substrate; providing, per each of the one or more LED devices, a compound semiconductor stack including an LED layer; applying a SiCN layer to the stack and the substrate, respectively; bonding the stack to the substrate, wherein the SiCN layer applied to the stack and the SiCN layer applied to the substrate are contacted; and annealing, after bonding, the bonded stack and substrate at a temperature equal to or higher than a processing temperature for completing the LED device from the stack, wherein said temperatures are at least 400° C. A semiconductor structure including the one or more LED devices reconstituted over a carrier substrate is also provided.


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