The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Jan. 09, 2019
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Osamu Matsuura, Kuwana, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/115 (2017.01); H01L 27/108 (2006.01); H01L 27/11573 (2017.01); H01L 27/11565 (2017.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/10891 (2013.01); H01L 27/115 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11286 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a transistor having a diffusion layer extending along a surface of a substrate and a gate electrode arranged above the diffusion layer; and contacts having elongated bottom surfaces connected to the diffusion layer on both sides of the gate electrode, in which the contacts are arranged so that the bottom surfaces of the contacts are not aligned in a straight line with an extension direction of the diffusion layer.