The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Dec. 18, 2019
Renesas Electronics Corporation, Tokyo, JP;
Shibun Tsuda, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
The reliability of the semiconductor device is suppressed from deteriorating. A first gate electrode is formed on the semiconductor layer SM located in the SOI regionA of the substratehaving the semiconductor base material SB, the insulating layer BX, and the semiconductor layer SM via the first gate insulating film, a second gate electrode is formed on the semiconductor base material SB located in the first regionBa of the bulk regionB and on which the epitaxial growth treatment is performed via the second gate insulating film, and a third gate electrode is formed on the semiconductor base material SB located in the second regionBb of the bulk regionB and on which the epitaxial growth treatment is not performed via the third gate insulating film.