The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Apr. 02, 2018
Applicant:
Board of Trustees of Michigan State University, East Lansing, MI (US);
Inventors:
Assignee:
Board of Trustees of Michigan State University, East Lansing, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0745 (2012.01); H01L 31/065 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/02118 (2013.01); H01L 21/02345 (2013.01); H01L 21/02381 (2013.01); H01L 21/02658 (2013.01); H01L 21/02667 (2013.01); H01L 21/02686 (2013.01); H01L 21/02689 (2013.01); H01L 31/065 (2013.01); H01L 31/0745 (2013.01); H01L 31/1812 (2013.01); Y02E 10/50 (2013.01);
Abstract
A heterojunction device is provided. The heterojunction device includes a silicon (Si) substrate; and a film of silicon carbide (SiC) deposited on a surface of the Si substrate. The SiC has a Si:C ratio that increases or decreases from a SiC surface in contact with the Si substrate to an opposing SiC surface that is not in contact with the Si substrate.