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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11069524 B1

PDFFull Text
Date of Patent:
Jul. 20, 2021

Filed:

Feb. 27, 2020

Methods for using remote plasma chemical vapor deposition (rp-cvd) and sputtering deposition to grow layers in light emitting devices

Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Isaac Wildeson, San Jose, CA (US);

Parijat Deb, San Jose, CA (US);

Erik Charles Nelson, Pleasanton, CA (US);

Junko Kobayashi, San Jose, CA (US);

Assignee:

LUMILEDS LLC, San Jose, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/02 (2010.01); H01L 29/88 (2006.01); H01L 33/04 (2010.01); H01L 29/66 (2006.01); H01L 33/00 (2010.01); H01L 21/203 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/02266 (2013.01); H01L 21/02271 (2013.01); H01L 21/203 (2013.01); H01L 29/66151 (2013.01); H01L 29/66219 (2013.01); H01L 29/88 (2013.01); H01L 29/882 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/0062 (2013.01); H01L 33/0075 (2013.01); H01L 33/0095 (2013.01); H01L 33/02 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02631 (2013.01); H01L 33/0025 (2013.01); H01L 33/325 (2013.01);
Abstract

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

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