The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Apr. 06, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Changbum Kim, Seoul, KR;

Sunghoon Kim, Seongnam-si, KR;

Seungyeon Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/4099 (2006.01); G11C 5/02 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 5/025 (2013.01); G11C 11/4087 (2013.01); G11C 11/4099 (2013.01); H01L 27/249 (2013.01);
Abstract

A memory device including a first memory cell array including first memory cells stacked vertically on a first memory cell array region of a top surface of a substrate; a second memory cell array including second memory cells stacked vertically on a second memory cell array region of the top surface; first word lines coupled to the first memory cells and including a subset of first word lines and remaining first word lines; second word lines coupled to the second memory cells and including a subset of second word lines and remaining second word lines; and a row decoder, including a plurality of merge pass transistors each commonly connected to a respective one of the subset of first word lines and a respective one of the subset of second word lines, disposed in a region of the top surface between the first and second cell array regions.


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