Memory device and method of operating the memory device for initializing sensing latch during evaluation operation

Abstract

Provided herein may be a memory device and a method of operating the memory device. The memory device includes a memory cell, a page buffer coupled to the memory cell through a bit line and configured to perform a read operation of sensing data stored in the memory cell, wherein the page buffer includes a data storage configured to store data sensed from the memory cell, the read operation includes a precharge period during which a precharge voltage is applied to the bit line, an evaluation period during which a state of the memory cell is incorporated into a voltage of the bit line, and a data storage period during which the data sensed through the bit line is stored in the data storage, and the data storage is initialized during the evaluation period.