The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Apr. 03, 2020
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventor:
Sang Heon Ye, Cheonan-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G01N 21/88 (2006.01); G01B 11/02 (2006.01); G01N 21/956 (2006.01); G01N 21/95 (2006.01); G09G 3/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70625 (2013.01); G01B 11/02 (2013.01); G01N 21/8851 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G09G 3/006 (2013.01);
Abstract
Systems and methods for measuring a critical dimension of a photoresist are described. Measuring a critical dimension of a photoresist may include obtaining intensity data, setting a plurality of unit areas, extracting the intensity data, calculating corrected intensity data, and calculating critical dimension data. Obtaining the intensity data by scanning the target substrate may include setting a first scan area and a second scan area, obtaining first intensity data, and obtaining second intensity data, and comparing the first intensity data and the second intensity data.