The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Aug. 03, 2020
Tectus Corporation, Saratoga, CA (US);
Kwong-Hin Henry Choy, San Jose, CA (US);
Paul Scott Martin, Palo Alto, CA (US);
Tectus Corporation, Saratoga, CA (US);
Abstract
A small projector uses an ultra-dense array of gallium nitride (GaN) LEDs. However, epitaxial growth of GaN typically produces a GaN region that is 5 um or thicker. To achieve high pixel density, the LEDs have small area, so the resulting LED structures are tall and skinny. This is undesirable because it makes further processing more difficult and has higher optical losses. As a result, it is beneficial to reduce the thickness of the GaN region. In one approach, a wafer with the GaN region on substrate is bonded to a backplane wafer containing LED driver circuits. The substrate is then separated from the GaN region, exposing a buffer layer of the GaN region. The GaN region is thinned and then patterned into individual LEDs. Typically, the buffer layer is removed entirely.