The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
May. 17, 2018
Cmos Sensor, Inc., Cupertino, CA (US);
Hui Wei, San Jose, CA (US);
CMOS Sensor, Inc., Cupertino, CA (US);
Abstract
Techniques of designing an image sensor particularly useful in lidar applications are described. According to one aspect of the present invention, an image sensor is designed to take advantage of the architecture of CMOS sensor with correlated double sampling, or CDS, to avoid the sensing speed being halved in order to cancel background light interference. It is commonly known that a photosensor is read twice (i.e., first and second readouts) in CDS for removing the inherent noises from the photosensor itself. Instead of subtracting a pixel's dark or reference output level from an actual light-induced signal, a background image is managed to be captured before the second readout of the sensor and subtracted from an actual image, where the actual image is defined to include an target. As a result, the readout speed of an image sensor is maintained while the background light interference is removed.