The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Mar. 13, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Banafsheh Abasahl, Münster, DE;

Anisuzzaman Boni, Berlin, DE;

Thomas Grille, Villach, AT;

Bernhard Jakoby, Linz, AT;

Reyhaneh Jannesari, Plesching, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/3504 (2014.01); G01N 33/00 (2006.01); G02B 1/00 (2006.01);
U.S. Cl.
CPC ...
G01N 21/3504 (2013.01); G01N 33/004 (2013.01); G02B 1/005 (2013.01);
Abstract

Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.


Find Patent Forward Citations

Loading…