The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Nov. 02, 2018
Applicants:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

National University Corporation Kanazawa University, Kanazawa, JP;

Inventors:

Hitoshi Noguchi, Takasaki, JP;

Shozo Shirai, Takasaki, JP;

Toshiharu Makino, Tsukuba, JP;

Masahiko Ogura, Tsukuba, JP;

Hiromitsu Kato, Tsukuba, JP;

Hiroyuki Kawashima, Tsukuba, JP;

Daisuke Kuwabara, Tsukuba, JP;

Satoshi Yamasaki, Tsukuba, JP;

Daisuke Takeuchi, Tsukuba, JP;

Norio Tokuda, Kanazawa, JP;

Takao Inokuma, Kanazawa, JP;

Tsubasa Matsumoto, Kanazawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/04 (2006.01); C30B 25/04 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); H01L 29/16 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
C30B 25/04 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/04 (2013.01); H01L 21/0262 (2013.01); H01L 21/02376 (2013.01); H01L 21/02527 (2013.01); H01L 29/1602 (2013.01); H01L 21/02057 (2013.01); H01L 21/02085 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01);
Abstract

A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.


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