The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Mar. 13, 2017
Applicants:

Agc Glass Europe, Louvain-la-Neuve, BE;

Agc Glass Company North America, Alpharetta, GA (US);

Agc Inc., Chiyoda Ku, JP;

Quertech Ingenierie, Caen, FR;

Inventors:

Benjamine Navet, Louvain-la-Neuve, BE;

Pierre Boulanger, Couthuin, BE;

Denis Busardo, Gonneville sur Mer, FR;

Assignees:

AGC GLASS EUROPE, Louvain-la-Neuve, BE;

AGC GLASS COMPANY NORTH AMERICA, Alpharetta, GA (US);

AGC Inc., Chiyoda Ku, JP;

QUERTECH INGENIERIE, Caen, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 23/00 (2006.01); C03C 3/087 (2006.01); C03C 3/091 (2006.01); C03C 3/097 (2006.01);
U.S. Cl.
CPC ...
C03C 23/0055 (2013.01); C03C 3/087 (2013.01); C03C 3/091 (2013.01); C03C 3/097 (2013.01);
Abstract

A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N, or O, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×10×A/kV+4.78×10ions/cmand −2.22×10×A/kV+1.09×10ions/cm, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.


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