The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Apr. 06, 2018
Applicant:

Lpkf Laser & Electronics Ag, Garbsen, DE;

Inventors:

Roman Ostholt, Langenhagen, DE;

Norbert Ambrosius, Garbsen, DE;

Daniel Dunker, Hannover, DE;

Arne Schnoor, Hannover, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/0622 (2014.01); B23K 26/362 (2014.01); B23K 26/402 (2014.01); C03C 15/00 (2006.01); B23K 26/00 (2014.01); B23K 26/361 (2014.01); C03B 33/02 (2006.01); C03C 23/00 (2006.01); B23K 26/53 (2014.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/0622 (2015.10); B23K 26/00 (2013.01); B23K 26/0006 (2013.01); B23K 26/361 (2015.10); B23K 26/362 (2013.01); B23K 26/402 (2013.01); B23K 26/53 (2015.10); C03B 33/0222 (2013.01); C03C 15/00 (2013.01); C03C 23/0025 (2013.01); B23K 2103/54 (2018.08);
Abstract

A method for machining, in particular for cutting an, in particular, planar substrate by laser-induced deep etching includes: moving laser radiation along a machining line; directing individual pulses onto the planar substrate at a spatial laser pulse distance (d); and subsequently removing an anisotropic material by etching at an etching rate (r) and an etching duration (t). Machining parameters are set according to a condition: 1>d/(R*t)>10.


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