The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Sep. 21, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Toru Ichimura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/122 (2006.01); H03K 17/18 (2006.01); H02M 1/32 (2007.01); H03K 17/082 (2006.01); H02P 27/08 (2006.01); H02M 7/48 (2007.01); H02P 27/06 (2006.01); H02P 29/024 (2016.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H02H 7/122 (2013.01); H02M 1/32 (2013.01); H03K 17/0828 (2013.01); H03K 17/18 (2013.01); H02M 1/08 (2013.01); H02M 7/48 (2013.01); H02P 27/06 (2013.01); H02P 27/08 (2013.01); H02P 29/024 (2013.01); H03K 2217/0027 (2013.01);
Abstract

A power semiconductor module includes a power semiconductor element; a control circuit which controls the power semiconductor element; and multiple terminals. The control circuit deactivates a gate terminal, which is a control electrode of the power semiconductor element, in an event of a fault in the power semiconductor element or the power semiconductor module, and outputs from a first output terminal a fault signal indicating the event of the fault in the power semiconductor module. When there is no fault in the power semiconductor element and the power semiconductor module, the control circuit uses the first output terminal for other applications such as for outputting temperature information on the power semiconductor module, for example. This allows the fault signal to be output without increasing the number of terminals of the power semiconductor module more than necessary.


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