The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Sep. 20, 2018
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Chao Jin, Xiamen, CN;

Chuang Yu Hsieh, Xiamen, CN;

Chen Kang Hsieh, Xiamen, CN;

Duxiang Wang, Xiamen, CN;

Chaoyu Wu, Xiamen, CN;

Chih Pang Ma, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); C23C 28/00 (2006.01); C23C 18/16 (2006.01); C23C 14/58 (2006.01); C23C 14/14 (2006.01); C23C 14/24 (2006.01); C23C 18/31 (2006.01); C23C 28/02 (2006.01); H01L 25/075 (2006.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); C23C 14/14 (2013.01); C23C 14/24 (2013.01); C23C 14/58 (2013.01); C23C 18/165 (2013.01); C23C 18/31 (2013.01); C23C 28/02 (2013.01); C23C 28/30 (2013.01); C23C 28/32 (2013.01); C23C 28/34 (2013.01); H01L 25/0753 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.


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