The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Oct. 15, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Doyoung Kwag, Suwon-si, KR;

Masaru Wada, Suwon-si, KR;

Jamyeong Koo, Suwon-si, KR;

Eunhye Kim, Suwon-si, KR;

Sangmoo Park, Suwon-si, KR;

Seona Yang, Seoul, KR;

Minsub Oh, Suwon-si, KR;

Yoonsuk Lee, Suwon-si, KR;

Youngkyong Jo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/48 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 33/382 (2013.01); H01L 33/46 (2013.01); H01L 33/48 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer.


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