The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Dec. 06, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventor:

Gabriel Pares, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 27/146 (2006.01); H01L 27/15 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 33/44 (2010.01); H01L 33/58 (2010.01); H01L 31/105 (2006.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 27/1462 (2013.01); H01L 27/14625 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/156 (2013.01); H01L 31/02161 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/1892 (2013.01); H01L 33/0093 (2020.05); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 31/105 (2013.01); H01L 33/0012 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A method is provided for producing a device with light emitting/light receiving diodes, including: producing, on a substrate, a stack including first and second doped semiconductor layers; first etching of the stack, forming first openings through the entire thickness of the second layer; producing dielectric portions covering, in the first openings, the side walls of the second layer; second etching of the stack, extending the first openings until reaching the substrate, delimiting the p-n junctions of the diodes; etching extending the first openings into a part of the substrate; producing first electrically conductive portions in the first openings, forming first electrodes of the diodes, and producing second electrodes electrically connected to the second layer; and eliminating the substrate, forming a collimation grid.


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