The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Oct. 14, 2019
Current generation from radiation with diamond diode-based devices for detection or power generation
Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);
Jason M Holmes, Mesa, AZ (US);
Franz A Koeck, Tempe, AZ (US);
Manpuneet Benipal, Tempe, AZ (US);
Ricardo O Alarcon, Chandler, AZ (US);
Stephen Goodnick, Fort McDowell, AZ (US);
Anna Zaniewski, Tempe, AZ (US);
Robert Nemanich, Scottsdale, AZ (US);
ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US);
Abstract
Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.