Thin-film transistor structure and manufacturing method thereof, and display panel having the same

Abstract

A manufacturing method of a thin film transistor is provided, which includes steps of: providing a flexible substrate with an active layer formed thereon; providing a dielectric layer disposed on the active layer, wherein the dielectric layer has openings; providing a heavily doped silicon layer in the openings, wherein the heavily doped silicon layer is connected to the active layer, extends upward along a sidewall of the openings, and covers an upper surface of the dielectric layer, and the heavily doped silicon layer configured as at least one source/drain; and providing a metal layer in the openings and on the at least one source/drain, wherein the metal layer is connected to the at least one source/drain. The active layer and the source/drain are formed as a same semiconductor material, so that contact resistance can be effectively lowered, thereby improving energy consumption.