The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
May. 15, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sang-Min Yoo, Suwon-si, KR;
Byung-Sung Kim, Suwon-si, KR;
Ju-Youn Kim, Suwon-si, KR;
Bong-Seok Suh, Seoul, KR;
Hyung-Joo Na, Seoul, KR;
Sung-Moon Lee, Suwon-si, KR;
Joo-Ho Jung, Suwon-si, KR;
Eui-Chul Hwang, Seoul, KR;
SAMSUNG ELECTRONICS CO. LTD., Gyeonggi-do, KR;
Abstract
A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.