The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Jan. 27, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A method of manufacturing an insulated-gate semiconductor device includes: digging a dummy trench and digging a gate trench so as to have a U-like shape in a planar pattern to surround the dummy trench into the U-like shape; forming a dummy electrode and a gate electrode in the dummy trench and the gate trench via a gate insulating film; forming a projection for testing connected to the dummy electrode via an opening of the U-like shape and a wiring layer for testing; and testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the wiring layer for testing and a charge transport region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile