The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Feb. 28, 2019
International Business Machines Corporation, Armonk, NY (US);
Su Chen Fan, Cohoes, NY (US);
Yann Mignot, Slingerlands, NY (US);
Hsueh-Chung Chen, Cohoes, NY (US);
James J. Kelly, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure includes the following steps. At least a first source/drain region and a second source/drain region are formed in a substrate. At least a first sacrificial layer and a second sacrificial layer are respectively formed over the first source/drain region and the second source/drain region. A spacer layer is formed on at least a top surface of the substrate and around sides of the first sacrificial layer and the second sacrificial layer. The spacer layer includes an electrical-isolating material. The first sacrificial layer and a second sacrificial layer are removed to form a first open trench and a second open trench. The first open trench and the second open trench are filled with metal contact material to form a first metal contact and a second metal contact electrically isolated from each other by the spacer layer.