The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Feb. 23, 2018
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Kyusang Lee, Crozet, VA (US);
Jeehwan Kim, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); B32B 37/26 (2006.01); B32B 38/18 (2006.01); H01L 21/683 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14607 (2013.01); B32B 37/26 (2013.01); B32B 38/1866 (2013.01); H01L 21/6836 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 27/14692 (2013.01); H01L 27/14694 (2013.01); H01L 31/022408 (2013.01); H01L 31/1804 (2013.01); H01L 31/184 (2013.01); H01L 31/1896 (2013.01); B32B 2457/00 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01);
Abstract
A method of fabricating a curved focal plane array (FPA) includes forming an epitaxial layer including a semiconductor on a release layer. The release layer includes a two-dimensional (2D) material and is disposed on a first substrate. The method also includes forming a metal layer on the epitaxial layer and transferring the epitaxial layer and the metal layer to a second substrate including an elastomer. The method also includes fabricating a plurality of photodetectors from the epitaxial layer and bending the second substrate to form the curved FPA.