The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Sep. 20, 2019
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Feng Guan, Beijing, CN;

Chen Xu, Beijing, CN;

Zhi Wang, Beijing, CN;

Liwei Liu, Beijing, CN;

Lei Chen, Beijing, CN;

Xueyong Wang, Beijing, CN;

Yan Chen, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1274 (2013.01); H01L 21/02675 (2013.01);
Abstract

A method for manufacturing a display substrate is provided to include: forming an amorphous silicon layer on a base substrate; irradiating at least part of the display region through a mask plate with a laser, to convert a portion of the amorphous silicon layer in the irradiated part of the display region corresponding to channel regions of active layers of transistors into polycrystalline silicon by a laser annealing process; irradiating at least part of the peripheral region with a laser, to convert the amorphous silicon layer in the irradiated part of the peripheral region into polycrystalline silicon; and forming the active layers of the transistors from the amorphous silicon layer which is converted to polycrystalline silicon by a patterning process.


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