The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Jun. 27, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Guk Il An, Goyang-si, KR;
Keun Hwi Cho, Seoul, KR;
Sung Min Kim, Incheon, KR;
Yoon Moon Park, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes: a substrate including a first region and a second region; a first interfacial layer disposed on the substrate in the first region and having a first thickness; a second interfacial layer disposed on the substrate in the second region, wherein the second interfacial layer includes a second thickness that is smaller than the first thickness; a first gate insulating layer disposed on the first interfacial layer and including a first ferroelectric material layer; a second gate insulating layer disposed on the second interfacial layer; a first gate electrode disposed on the first gate insulating layer; and a second gate electrode disposed on the second gate insulating layer.