The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Aug. 22, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/775 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 28/20 (2013.01); H01L 28/24 (2013.01); H01L 29/0649 (2013.01); H01L 29/6656 (2013.01); H01L 29/66484 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/7831 (2013.01); H01L 29/7855 (2013.01); H01L 23/485 (2013.01); H01L 29/0673 (2013.01);
Abstract
A semiconductor device includes a substrate, a first recess formed in the substrate, a first source/drain filling the first recess, a vertical metal resistor on the first source/drain, and an insulating liner separating the metal resistor from the first source/drain, with the vertical metal resistor being between two gate electrodes.